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RQ3E160ADTB
Manufacturer
ROHMManufacturer Product Number
RQ3E160ADTB
Description
FET类型：N-Channel 漏源极电压Vds：30V 连续漏极电流Id：16A(Ta) 栅极电压Vgs：±20V Pd-功率耗散(Max)：2W(Ta)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source On-Resistance | 0.007Ω |
| Drain-Source Saturation Current | 16A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 99
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1057 | |
| 10+ | $ 0.9233 | |
| 30+ | $ 0.8244 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRQ3E160ADTB1
NCH 30V 16A MIDDLE POWER MOSFET
ROHM
RQ3E180AJTB
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ROHM
RQ3E180AJTB
N-Channel 30V 18A(Ta),30A(Tc) ±12V 2W(Ta),30W(Tc) 4.5mΩ@18A,4.5V -55℃~150℃ 8-PowerVDFN
ROHM
RQ3E180AJTB
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ROHM