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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RK7002BMT116

Manufacturer

ROHM

Manufacturer Product Number

RK7002BMT116

Description

栅极电压Vgs：±20V Pd-功率耗散(Max)：200mW(Ta) Rds On(Max)@Id,Vgs：2.4Ω@250mA,10V 工作温度：150°C(TJ) 封装/外壳：SOT-23

Manufacturer Standard Lead Time

2-3

Detailed Description

栅极电压Vgs：±20V Pd-功率耗散(Max)：200mW(Ta) Rds On(Max)@Id,Vgs：2.4Ω@250mA,10V 工作温度：150°C(TJ) 封装/外壳：SOT-23

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Gate-Source Breakdown Voltage	60V
Drain-Source Saturation Current	0.25A
Drain-Source On-Resistance	3.2 Ω

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1,758

Quantity	Unit Price	Ext Price
1+	$ 0.0808
200+	$ 0.0265
1500+	$ 0.0167
3000+	$ 0.0125

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Associated Product

See All

RK7002BMT116-ES

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EIECSUPER

RK7002BMT116-HXY

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HUAXUANYANG

RK7002BMT116-MS

类型：N沟道漏源电压(Vdss)：60V连续漏极电流(Id)：300mA功率(Pd)：350mW导通电阻(RDS(on)@Vgs,Id)：2.2Ω@10V,300mA

MSKSEMI

RK7002BT116

N沟道耐压:60V 电流:250mA

ROHM