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RF4E100AJTCR
Manufacturer
ROHMManufacturer Product Number
RF4E100AJTCR
Description
MOSFET Nch 30V 10A Si MOSFET
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 10 A |
| Drain-Source On-Resistance | 0.0124 Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 50
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0862 | |
| 10+ | $ 0.9622 | |
| 100+ | $ 0.7450 | |
| 500+ | $ 0.6099 | |
| 1000+ | $ 0.4776 | |
| 3000+ | $ 0.4414 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRF4E110BNTR
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ROHM
RF4E110BNTR
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ROHM
RF4E110BNTR
连续漏极电流Id：11A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：11.1mΩ 漏源极电压Vds：30V 栅极电压Vgs：2V
ROHM
RF4E110GNTR
连续漏极电流Id：11A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：11.3mΩ@11A,10V 漏源极电压Vds：30V 栅极电压Vgs：±20V
ROHM
