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EMZ1FHAT2R
Manufacturer
ROHMManufacturer Product Number
EMZ1FHAT2R
Description
Bipolar (BJT) Transistor Array
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 150 mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Jie Zhi Current（icbo） | 100nA |
| Operating Temperature | 150℃ |
| Te Zheng Frequency | 180MHz |
| DC Gain (hFE@Ic, Vce) | 120 @ 1mA, 6V |
| Ji Dian Ji Current（ic） | 150mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 400mV @ 5mA, 50mA |
| Jing Ti Guan Type | NPN, PNP |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,223
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1072 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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