Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
EM6K7T2CR
Manufacturer
ROHMManufacturer Product Number
EM6K7T2CR
Description
连续漏极电流Id：200mA(Ta) FET类型：2N-Channel Rds On(Max)@Id,Vgs：1.2Ω@200mA,2.5V 栅极电压Vgs：±8V Pd-功率耗散(Max)：150mW
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 0.2A |
| Drain-Source On-Resistance | 1.4Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 13,025
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1086 | |
| 50+ | $ 0.0877 | |
| 150+ | $ 0.0766 | |
| 500+ | $ 0.0696 | |
| 2500+ | $ 0.0585 | |
| 5000+ | $ 0.0557 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllEM6K7T2R
场效应管(MOSFET) 150mW 20V 200mA 2个N沟道 SOT-563
ROHM
EM6K7T2R
MOSFET TRNSISTR DUAL MOSFET
ROHM
EM6M1T2R
MOSFET Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A
ROHM
EM6M2T2R
原装正品，假一罚十
ROHM