Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
EM6K1T2R
Manufacturer
ROHMManufacturer Product Number
EM6K1T2R
Description
MOSFET 2N-CH 30V .1A
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 150W |
| Drain-Source Saturation Current | 0.1A |
| Drain-Source On-Resistance | 8 Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 19,016
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2686 | |
| 10+ | $ 0.7840 | |
| 100+ | $ 0.5041 | |
| 500+ | $ 0.3843 | |
| 1000+ | $ 0.3454 | |
| 2000+ | $ 0.3119 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllEM6K31GT2R
--
ROHM
EM6K31T2R
原装正品，假一罚十
ROHM
EM6K31T2R
--
ROHM
EM6K31T2R
连续漏极电流Id：250mA Pd-功率耗散(Max)：150mW Rds On(Max)@Id,Vgs：2.4Ω@250mA,10V 漏源极电压Vds：60V 栅极电压Vgs：±20V
ROHM