Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DTD113ECHZGT116
Manufacturer
ROHMManufacturer Product Number
DTD113ECHZGT116
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 500mA 200MHz 200mW Surface Mount SST3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Current（ic） | 0.5 A |
| Te Zheng Frequency | 200MHz |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| DC Gain (hFE@Ic, Vce) | 33 |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,517
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2674 | |
| 10+ | $ 0.1615 | |
| 100+ | $ 0.1003 | |
| 500+ | $ 0.0738 | |
| 1000+ | $ 0.0529 | |
| 5000+ | $ 0.0529 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDTD113EKT146
原装正品，工厂库存
ROHM
DTD113ZCHZGT116
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 500mA 200MHz 200mW Surface Mount SST3
ROHM
DTD113ZCHZGT116
封装/外壳：SOT-23 功率耗散Pd：200mW 晶体管类型：NPN 集电极-发射极最大电压VCEO：50V 集电极连续电流：500mA
ROHM
DTD113ZCT116
--
ROHM