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DTC115GU3T106
Manufacturer
ROHMManufacturer Product Number
DTC115GU3T106
Description
Pre-Biased Bipolar Transistor (BJT)
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 200 mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Te Zheng Frequency | 250MHz |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Jing Ti Guan Type | NPN - Pre-biased |
| Ji Dian Ji Current（ic） | 100mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV@500µA, 10mA |
| DC Gain (hFE@Ic, Vce) | 82@5mA, 5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,990
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1866 | |
| 100+ | $ 0.0989 | |
| 500+ | $ 0.0654 | |
| 1000+ | $ 0.0446 | |
| 3000+ | $ 0.0334 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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