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DTC114YU3HZGT106
Manufacturer
ROHMManufacturer Product Number
DTC114YU3HZGT106
Description
Pre-Biased Bipolar Transistor (BJT) NPN - 预偏压 50V 100mA 250MHz 200mW 表面贴装 UMT3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Current（ic） | 0.1A |
| Te Zheng Frequency | 250MHz |
| Power | 0.2W |
| DC Gain (hFE@Ic, Vce) | 68 |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 354
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3662 | |
| 10+ | $ 0.2242 | |
| 100+ | $ 0.1393 | |
| 500+ | $ 0.1017 | |
| 1000+ | $ 0.0738 | |
| 5000+ | $ 0.0571 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDTC114YU3T106
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3
ROHM
DTC114YU3T106
封装/外壳：SOT-323 功率耗散Pd：200mW 晶体管类型：NPN 集电极-发射极最大电压VCEO：50V 集电极连续电流：70mA
ROHM
DTC114YUA
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Slkor
DTC114YUAFRAT106
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ROHM