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DTC114EMT2L
Manufacturer
ROHMManufacturer Product Number
DTC114EMT2L
Description
DTC114EM Series 50 V 100 mA Surface Mount NPN Digital Transistor - VMT-3
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Current（ic） | 0.1A |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Power | 0.15W |
| Te Zheng Frequency | 250MHz |
| DC Gain (hFE@Ic, Vce) | 30 |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 250
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5877 | |
| 10+ | $ 0.4289 | |
| 100+ | $ 0.2409 | |
| 500+ | $ 0.1588 | |
| 1000+ | $ 0.1044 | |
| 8000+ | $ 0.0849 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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封装/外壳：SOT-323 功率耗散Pd：200mW 晶体管类型：NPN 集电极-发射极最大电压VCEO：50V 集电极连续电流：100mA
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DTC114EU3HZGT106
封装/外壳：SOT-323 功率耗散Pd：200mW 晶体管类型：NPN 集电极-发射极最大电压VCEO：50V 集电极连续电流：100mA
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DTC114EU3T106
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3
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DTC114EU3T106
封装/外壳：SOT-323 功率耗散Pd：200mW 晶体管类型：NPN 集电极-发射极最大电压VCEO：50V 集电极连续电流：50mA
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