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DTA114EU3HZGT106
Manufacturer
ROHMManufacturer Product Number
DTA114EU3HZGT106
Description
Pre-Biased Bipolar Transistor (BJT) Surface Mount UMT3
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 200 mW |
| Te Zheng Frequency | 250MHz |
| Jing Ti Guan Type | PNP |
| Input Resistance | 10kΩ |
| Ji She Ji Ji Chuan Voltage（vceo） | -50V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -300mV |
| Ji Dian Ji Current（ic） | -50mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 60
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1379 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDTA114EU3T106
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3
ROHM
DTA114EU3T106
封装/外壳：SOT-323 功率耗散Pd：200mW 晶体管类型：PNP 集电极-发射极最大电压VCEO：-50V 集电极连续电流：-50mA
ROHM
DTA114EUA
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DTA114EUA
数字晶体管 200mW 50V 100mA 1个PNP-预偏置 SOT-323(SC-70)
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