Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSS670T116
Manufacturer
ROHMManufacturer Product Number
BSS670T116
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 0.35W |
| Gate-Source Breakdown Voltage | 60V |
| Input Capacitance | 5 pF |
| Drain-Source On-Resistance | 0.81Ω |
| Drain-Source Saturation Current | 650A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 40+ | $ 0.1184 | |
| 100+ | $ 0.0947 | |
| 1000+ | $ 0.0710 | |
| 6000+ | $ 0.0543 | |
| 15000+ | $ 0.0473 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSS7728N-HXY
--
HUAXUANYANG
BSS7728NH6327
Infineon SIPMOS 系列 Si N沟道 MOSFET BSS7728NH6327, 200 mA, Vds=60 V, 3引脚 SOT-23封装
Infineon
BSS7728NH6327XTSA2
场效应管(MOSFET) 360mW 60V 200mA 1个N沟道 SOT-23
Infineon
BSS7728NH6327XTSA2
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
Infineon