Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
2SCR563F3TR
Manufacturer
ROHMManufacturer Product Number
2SCR563F3TR
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 1 W |
| Jing Ti Guan Type | NPN |
| Te Zheng Frequency | 200MHz |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Jie Zhi Current（icbo） | 1 μA |
| Ji Dian Ji Current（ic） | 6A |
| DC Gain (hFE@Ic, Vce) | 180 @ 500 mA, 3 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 350mV@3A,150mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 20
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5208 | |
| 10+ | $ 0.5083 | |
| 30+ | $ 0.4999 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All2SCR564F3TR
雙極結晶體管 - BJT Small and Excellent Thermal Conductivity, NPN 4A 80V Middle Power Transistor
ROHM
2SCR564F3TR
--
ROHM
2SCR572D3FRATL
Bipolar (BJT) Transistor NPN 30V 5A 300MHz 10W Surface Mount TO-252
ROHM
2SCR572D3TL1
--
ROHM