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PJD35P03_L2_00001
Manufacturer
PANJITManufacturer Product Number
PJD35P03_L2_00001
Description
Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Drain-Source Voltage | 30V |
| Gate Charge | 11 nC @ 4.5 V |
| Power | 2W, 35W |
| On-Resistance | 19mΩ @ 8A, 10V |
| Continuous Drain Current | 8.4A, 35A |
| Input Capacitance | 1169pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,493
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5347 | |
| 10+ | $ 0.4275 | |
| 100+ | $ 0.3217 | |
| 250+ | $ 0.2883 | |
| 500+ | $ 0.2715 | |
| 1000+ | $ 0.2465 | |
| 3000+ | $ 0.2145 | |
| 6000+ | $ 0.2061 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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封装/外壳：TO-252AA 栅极电压Vgs：20V FET类型：N-Channel Pd-功率耗散(Max)：83W 工作温度：-55℃~150℃
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