Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NTJD5121NT1G
Manufacturer
OnsemiManufacturer Product Number
NTJD5121NT1G
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 0.25W |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source On-Resistance | 1.6Ω |
| Input Capacitance | 2.5pF |
| Drain-Source Saturation Current | 0.295A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8,100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.0585 | |
| 100+ | $ 0.0473 | |
| 300+ | $ 0.0432 | |
| 3000+ | $ 0.0348 | |
| 6000+ | $ 0.0320 | |
| 9000+ | $ 0.0306 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
NTJD5121NT1G-VB
--
Vbsemi
NTJD5121NT2G
MOSFET NFET SC88D 60V 295mA
Onsemi
NTJS3151PT1G
MOSFET 12V 3.3A P-Channel
Onsemi
NTJS3151PT1G
P-Channel 12 V 45 mOhm 0.625 W Surface Mount Trench Power MOSFET - SOT-363
Onsemi
