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NTJD4105CT1G
Manufacturer
OnsemiManufacturer Product Number
NTJD4105CT1G
Description
MOSFET 20V/-8V 0.63A/-.775A Complementary
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Input Capacitance | 5 pF |
| Power | 0.55W |
| Drain-Source Saturation Current | 0.63A |
| Drain-Source On-Resistance | 0.375Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,766
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6949 | |
| 10+ | $ 0.4275 | |
| 100+ | $ 0.2702 | |
| 500+ | $ 0.2005 | |
| 1000+ | $ 0.1782 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllNTJD4105CT2G
互补，小信号 MOSFET 此互补双器件使用小封装 (2 x 2 mm) 和低 RDS(on) MOSFET，可实现最小占位，提高电路能效。 低 RDS(on) 性能特别适用于单锂离子电池或双电池锂离子电池供电设备，例如手机、媒体播放器、数码相机和 PDA。
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