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NTJD1155LT1G
Manufacturer
OnsemiManufacturer Product Number
NTJD1155LT1G
Description
场效应管(MOSFET) 400mW 8V 1.3A 1个N沟道+1个P沟道 SC-88-6
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 0.4W |
| Gate-Source Breakdown Voltage | 8V |
| Drain-Source Saturation Current | 1.3A |
| Drain-Source On-Resistance | 0.175Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5027 | |
| 100+ | $ 0.3983 | |
| 750+ | $ 0.3579 | |
| 1500+ | $ 0.3356 | |
| 3000+ | $ 0.3147 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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