Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NSVMSD1819A-RT1G
Manufacturer
OnsemiManufacturer Product Number
NSVMSD1819A-RT1G
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Power | 150 mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Jie Zhi Current（icbo） | 100nA |
| Operating Temperature | 150℃ |
| Ji Dian Ji Current（ic） | 100mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 500mV@10mA, 100mA |
| DC Gain (hFE@Ic, Vce) | 210@2mA，10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 15
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.0891 | |
| 50+ | $ 0.0710 | |
| 150+ | $ 0.0627 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
NSVMUN5132T1G
--
Onsemi
NSVMUN5234T1G
--
Onsemi
NSVMUN5234T1G
--
Onsemi
NSVMUN5332DW1T1G
--
Onsemi
