Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NE521DR2G
Manufacturer
OnsemiManufacturer Product Number
NE521DR2G
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | 0℃~70℃ |
| Shu Ru Shi Tiao Voltage | 10000 µV |
| Shu Ru Pian Zhi Current | 40µA |
| Supply Voltage | -7V |
| Output Type | TOTEM POLE |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 404
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0096 | |
| 10+ | $ 0.7213 | |
| 25+ | $ 0.6489 | |
| 100+ | $ 0.5709 | |
| 250+ | $ 0.5333 | |
| 500+ | $ 0.5111 | |
| 1000+ | $ 0.4930 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
NE5510279A-T1-A
--
Renesas
NE5517DR2G
IC OPAMP TRANSCOND 2MHZ 16SOIC
Onsemi
NE5517DR2G
--
Onsemi
NE5532AD
OP Amp Dual GP ±15V 8-Pin SOIC Tube
TI
