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NCP5111DR2G
Manufacturer
OnsemiManufacturer Product Number
NCP5111DR2G
Description
HIGH VOLT MOSFET DRIVER
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -40℃~125℃ |
| Driver Configuration | Half-bridge |
| Load Type | IGBT, N-channel MOSFET |
| Qu Dong Tong Dao Shu | 2 |
| Supply Voltage | 10V~20V |
| Fall Time | 35ns |
| Rise Time | 85ns |
| Peak Source Current | 250mA |
| Peak Sink Current | 500mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,079
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.4650 | |
| 10+ | $ 1.2575 | |
| 100+ | $ 0.8481 | |
| 500+ | $ 0.8091 | |
| 2500+ | $ 0.7701 | |
| 5000+ | $ 0.7325 | |
| 7500+ | $ 0.6921 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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IC REG LDO 1.5V 0.15A 5TSOP
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