Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MJD117T4G
Manufacturer
OnsemiManufacturer Product Number
MJD117T4G
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | PNP |
| Ji She Ji Ji Chuan Voltage（vceo） | 100V |
| Operating Temperature | 65℃~150℃ |
| Ji Dian Ji Current（ic） | 2 A |
| Power | 1.75W |
| Ji Dian Ji Jie Zhi Current（icbo） | 20µA |
| DC Gain (hFE@Ic, Vce) | 1000 @ 2A, 3V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 3V @ 40mA, 4A |
| Te Zheng Frequency | 25MHz |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
MJD122
--
YFW
MJD122
达林顿管 MJD122 TO-252 NPN,Vceo=100V,Ic=8A
JSCJ
MJD122-1
達靈頓晶體管 NPN PWR Darlington Int Anti Collector
ST
MJD122-HXY
--
HUAXUANYANG