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MJD112T4G
Manufacturer
OnsemiManufacturer Product Number
MJD112T4G
Description
MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Power | 20W |
| Ji She Ji Ji Chuan Voltage（vceo） | 100V |
| Operating Temperature | 65℃~150℃ |
| Ji Dian Ji Current（ic） | 2 A |
| Ji Dian Ji Jie Zhi Current（icbo） | 20µA |
| DC Gain (hFE@Ic, Vce) | 1000 @ 2A, 3V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 3V @ 40mA, 4A |
| Te Zheng Frequency | 25MHz |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,212
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.7254 | |
| 50+ | $ 1.4831 | |
| 100+ | $ 1.2380 | |
| 500+ | $ 1.0249 | |
| 1000+ | $ 0.8411 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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