Manufacturer
OnsemiManufacturer Product Number
FQT5P10TF
Description
P 沟道,QFET® MOSFET,-100V,-1.0A,1.05Ω
Manufacturer Standard Lead Time
2-3
Detailed Description
P 沟道,QFET® MOSFET,-100V,-1.0A,1.05Ω
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 100 V |
| Type | 1 P-Channel |
| Power | 2W |
| Threshold Voltage | 4V@250μA |
| Continuous Drain Current | 1A |
| Gate Charge | 8.2nC@10V |
| Input Capacitance | 250pF@25V |
| On-Resistance | 1.05Ω @ 10V, 500mA |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8578 | |
| 100+ | $ 0.7102 | |
| 1000+ | $ 0.6559 | |
| 2000+ | $ 0.6183 | |
| 4000+ | $ 0.5904 |
Minimum:1/Multiple:1
Total amount: