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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FQD8P10TM-F085

Manufacturer

Onsemi

Manufacturer Product Number

FQD8P10TM-F085

Description

场效应管(MOSFET) 2.5W；44W 100V 6.6A 1个P沟道 TO-252AA

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) 2.5W；44W 100V 6.6A 1个P沟道 TO-252AA

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Gate-Source Breakdown Voltage	100V
Drain-Source On-Resistance	0.53 Ω
Drain-Source Saturation Current	6.6 A

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1,893

Quantity	Unit Price	Ext Price
1+	$ 1.2839
100+	$ 1.0667
1250+	$ 0.9622
2500+	$ 0.9191

Price For：Each

Minimum:1/Multiple:1

Total amount:

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FQD8P10TM_F085

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1000V, 8A, CFET

Onsemi