Manufacturer
OnsemiManufacturer Product Number
FQD5N60CTM
Description
场效应管(MOSFET) 2.5W;49W 600V 2.8A 1个N沟道 TO-252-2
Manufacturer Standard Lead Time
2-3
Detailed Description
场效应管(MOSFET) 2.5W;49W 600V 2.8A 1个N沟道 TO-252-2
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 600V |
| Threshold Voltage | 4V@250μA |
| Continuous Drain Current | 2.8A |
| Input Capacitance | 670pF@25V |
| Gate Charge | 19 nC @ 10 V |
| Power | With watchdog function; low ESR; Over-current protection (OCP) |
| On-Resistance | 9kHz~8GHz |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0124 | |
| 100+ | $ 0.8383 | |
| 1250+ | $ 0.7589 | |
| 2500+ | $ 0.7241 |
Minimum:1/Multiple:1
Total amount: