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FQD12N20LTM
Manufacturer
OnsemiManufacturer Product Number
FQD12N20LTM
Description
场效应管(MOSFET) 2.5W；55W 200V 9A 1个N沟道 TO-252(DPAK)
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 2V@250μA |
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 9A |
| Input Capacitance | 1080pF@25V |
| Power | 2.5W, 55W |
| Gate Charge | 21nC@5V |
| On-Resistance | 280mΩ@4.5A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 51,109
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6056 | |
| 10+ | $ 0.9943 | |
| 100+ | $ 0.6656 | |
| 500+ | $ 0.5208 | |
| 1000+ | $ 0.4080 | |
| 5000+ | $ 0.4011 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllFQD12N20LTM-F085
TO-252 3L (DPAK)200V /9A/0.28 OHM @ VGS=10V
Onsemi
FQD12N20LTM-F085P
200V /9A/0.28 OHM @ VGS=10V
Onsemi
FQD12N20TM-JSM
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JSMSEMI
FQD12P10-VB
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Vbsemi
