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FQB34P10TM
Manufacturer
OnsemiManufacturer Product Number
FQB34P10TM
Description
场效应管(MOSFET) FQB34P10TM TO-263-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source On-Resistance | 0.06Ω |
| Drain-Source Saturation Current | 33.5A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 184
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.7866 | |
| 100+ | $ 1.4246 | |
| 800+ | $ 1.3563 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllFQB44N10TM
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FQB44N10TM
功率 MOSFET，N 沟道，QFET®，100 V，43.5 A，52 mΩ，D2PAK
Onsemi
FQB44N10TM
N-Channel 100 V 0.039 Ohm 48 nC SMT QFET Mosfet - TO-263-3
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FQB47P06TM-AM002
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Onsemi
