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FDP3672

Manufacturer

Onsemi

Manufacturer Product Number

FDP3672

Description

Power Field-Effect Transistor, 5.9A I(D), 105V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Standard Lead Time

8-12

Detailed Description

Power Field-Effect Transistor, 5.9A I(D), 105V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃ ~ 175℃
Threshold Voltage	4V@250µA
Type	N-channel
Gate Charge	37nC@10V
Power	135W
Drain-Source Voltage	105V
Continuous Drain Current	5.9A, 41A
On-Resistance	33mΩ@41A，10V
Input Capacitance	1670pF@25V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

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