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FDN357N
Manufacturer
OnsemiManufacturer Product Number
FDN357N
Description
N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 0.5W |
| Drain-Source Saturation Current | 1.9 A |
| Drain-Source On-Resistance | 0.06Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 23,452
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.3563 | |
| 10+ | $ 0.8453 | |
| 100+ | $ 0.5445 | |
| 500+ | $ 0.4164 | |
| 1000+ | $ 0.3746 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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FDN357N-HXY
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