Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
FDN337N
Manufacturer
OnsemiManufacturer Product Number
FDN337N
Description
N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 2.2A |
| Drain-Source On-Resistance | 0.065Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 72,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3000+ | $ 0.3467 | |
| 6000+ | $ 0.3189 | |
| 9000+ | $ 0.3050 | |
| 15000+ | $ 0.2883 | |
| 21000+ | $ 0.2785 | |
| 30000+ | $ 0.2715 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
FDN337N(UMW)
--
UMW
FDN337N-HXY
--
HUAXUANYANG
FDN338P
类型：P沟道漏源电压(Vdss)：20V连续漏极电流(Id)：2A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：110Ω@-4.5V,-2A阈值电压(Vgs(th)@Id)：-1.3V@250uA
MSKSEMI
FDN338P
--
JSMSEMI