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FDN302P
Manufacturer
OnsemiManufacturer Product Number
FDN302P
Description
场效应管(MOSFET) 500mW 20V 2.4A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 0.5W |
| Drain-Source Saturation Current | 2.4 A |
| Drain-Source On-Resistance | 0.055Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2813 | |
| 200+ | $ 0.2158 | |
| 1500+ | $ 0.1866 | |
| 3000+ | $ 0.1727 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
FDN302P(UMW)
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UMW
FDN302P-NL-VB
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Vbsemi
FDN304P
MOSFET P-CH 20V 2.4A SOT23
UMW
FDN304P
场效应管(MOSFET) 500mW 20V 2.4A 1个P沟道 SOT-23
Onsemi