Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
FDMS86163P
Manufacturer
OnsemiManufacturer Product Number
FDMS86163P
Description
场效应管(MOSFET) FDMS86163P PQFN-8(4.9x5.8)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Drain-Source Voltage | 100 V |
| Gate Charge | 59nC @ 10V |
| Power | 2.5 W, 104 W |
| Input Capacitance | 4085pF @ 50V |
| Continuous Drain Current | 7.9 A, 50 A |
| On-Resistance | 22 mΩ @ 7.9 A, 10 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,855
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.8493 | |
| 100+ | $ 1.5318 | |
| 750+ | $ 1.4148 | |
| 1500+ | $ 1.3382 | |
| 3000+ | $ 1.2811 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllFDMS86180
--
Onsemi
FDMS86180
N-Channel 100 V 3.2 mOhmShielded Gate PowerTrench Mosfet - Power56
Onsemi
FDMS86180
--
Onsemi
FDMS86181
N-Channel 100 V 4.2 mOhm 42 nC SMT Shielded Gate PowerTrench Mosfet - Power56
Onsemi