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FDC653N
Manufacturer
OnsemiManufacturer Product Number
FDC653N
Description
N-Channel 30 V 0.035 Ohm Enhancement Mode Field Effect Transistor - SSOT-6
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 1.6W |
| Drain-Source On-Resistance | 0.055Ω |
| Drain-Source Saturation Current | 5 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,175
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7548 | |
| 10+ | $ 0.6058 | |
| 25+ | $ 0.5347 | |
| 50+ | $ 0.4902 | |
| 100+ | $ 0.4679 | |
| 500+ | $ 0.4428 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllFDC654P
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Vbsemi
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场效应管(MOSFET) 1.6W 30V 6.3A 1个N沟道 SSOT-6
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