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FDC6327C
Manufacturer
OnsemiManufacturer Product Number
FDC6327C
Description
MOSFET-阵列-N-和-P-沟道-20V-2.7A-1.9A-700mW-表面贴装型-SuperSOT™-6
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source On-Resistance | 0.08Ω |
| Drain-Source Saturation Current | 2.7 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7,619
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.9998 | |
| 50+ | $ 0.8313 | |
| 100+ | $ 0.6629 | |
| 500+ | $ 0.4693 | |
| 1500+ | $ 0.4609 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
FDC6327C-MS
类型：N沟道漏源电压(Vdss)：20V连续漏极电流(Id)：2A功率(Pd)：1.25W导通电阻(RDS(on)@Vgs,Id)：60mΩ@4.5V,3AP沟道漏源电压(Vdss)：20V连续漏极电流(Id)：2A功率(Pd)：1.25W导通电阻(RDS(on)@Vgs,Id)：100mΩ@-4.5V,3A
MSKSEMI
FDC6329L
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Onsemi
FDC6329L
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Onsemi
FDC6329L-TP
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TECH PUBLIC