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DTC115EM3T5G
Manufacturer
OnsemiManufacturer Product Number
DTC115EM3T5G
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Jing Ti Guan Type | NPN - Pre-biased |
| Ji Dian Ji Current（ic） | 100mA |
| DC Gain (hFE@Ic, Vce) | 80 @ 5 mA, 10 V |
| Input Resistance | 100kΩ |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 250mV@300µA, 10mA |
| Power | 260 mW |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8,200
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1323 | |
| 50+ | $ 0.1044 | |
| 150+ | $ 0.0891 | |
| 500+ | $ 0.0794 | |
| 2500+ | $ 0.0710 | |
| 5000+ | $ 0.0654 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDTC115EMT2L
封装/外壳：SOT-723 功率耗散Pd：150mW 晶体管类型：NPN 集电极-发射极最大电压VCEO：50V 集电极连续电流：100mA
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Pre-Biased Bipolar Transistor (BJT) NPN - 预偏压 50V 100mA 250MHz 200mW 表面贴装 UMT3
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