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BVSS123LT1G
Manufacturer
OnsemiManufacturer Product Number
BVSS123LT1G
Description
原装正品，上海工厂库存
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Power | 225mW |
| Threshold Voltage | 2.8V@1mA |
| Continuous Drain Current | 170mA |
| Input Capacitance | 20pF@25V |
| On-Resistance | 6Ω@100mA, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 19,814
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7144 | |
| 10+ | $ 0.4373 | |
| 100+ | $ 0.2757 | |
| 500+ | $ 0.2061 | |
| 1000+ | $ 0.1824 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BVSS123LT1G-VB
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BVSS138LT1G
场效应管(MOSFET) 225mW 50V 200mA 1个N沟道 SOT-23
Onsemi
BVSS138LT1G
类型：N沟道漏源电压(Vdss)：55V连续漏极电流(Id)：0.3A功率(Pd)：0.35W导通电阻(RDS(on)@Vgs,Id)：1.2mΩ@10V,0.2A阈值电压(Vgs(th)@Id)：0.8V-1.6V@250uA
MSKSEMI
BVSS138LT1G
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TECH PUBLIC
