Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSS64LT1G
Manufacturer
OnsemiManufacturer Product Number
BSS64LT1G
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Jing Ti Guan Type | NPN |
| Ji Dian Ji Jie Zhi Current（icbo） | 100nA |
| Ji She Ji Ji Chuan Voltage（vceo） | 80V |
| Ji Dian Ji Current（ic） | 100mA |
| Power | 225mW |
| Te Zheng Frequency | 60 MHz |
| DC Gain (hFE@Ic, Vce) | 20@10mA, 1V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 200mV@30mA, 300mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 130
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.0710 | |
| 50+ | $ 0.0696 | |
| 150+ | $ 0.0682 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSS670AHZGT116
--
ROHM
BSS670S2L H6327
场效应管(MOSFET) 360mW 55V 540mA 1个N沟道 SOT-23
Infineon
BSS670S2LH6327
--
Infineon
BSS670S2LH6327XT
MOSFET OptiMOS Buck Converter Series
Infineon