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AFGY160T65SPD-B4
Manufacturer
OnsemiManufacturer Product Number
AFGY160T65SPD-B4
Description
IGBT 電晶體 IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning
Manufacturer Standard Lead Time
8-12
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Ji Dian Ji Ji Chuan Voltage（vces） | 650V |
| Type | Trench Field Stop |
| Ji Dian Ji Current（ic） | 240 A |
| Ji Dian Ji Bao He Voltage（vce(sat）) | 2.05V@15V, 160A |
| Kai Qi Yan Chi Time | 53ns |
| Dao Tong Sun Hao | 12.4mJ |
| Fan Xiang Hui Fu Time | 132ns |
| Power | 882W |
| Ji Dian Ji Mai Chong Current（icm） | 480A |
| Gate Charge | 245nC |
| Guan Duan Yan Chi Time | 98ns |
| Guan Duan Sun Hao | 5.7mJ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
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|---|
Additional Resources
| Attribute | Description |
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In Stock: 0
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