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2SK3666-2-TB-E
Manufacturer
OnsemiManufacturer Product Number
2SK3666-2-TB-E
Description
MOSFET SWITCHING DEVICE
Manufacturer Standard Lead Time
8-12
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Jing Ti Guan Type | NPN - Pre-bias |
| Ji Dian Ji Current（ic） | 100 mA |
| DC Gain (hFE@Ic, Vce) | 35 @ 5mA, 10V |
| Resistance Bi | 10 kOhms |
| Ji She Ji Ji Chuan Voltage（vceo） | 50 V |
| Power | 230 mW |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 250mV @ 300µA, 10mA |
| Input Resistance | 10 kOhms |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All2SK3666-3-TB-E
JFET SWITCHING DEVICE
Onsemi
2SK3666G-3-AE3-R
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UTC
2SK3668-ZK-E1-AY
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Renesas
2SK3669-VB
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Vbsemi