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2SC3649T-TD-E
Manufacturer
OnsemiManufacturer Product Number
2SC3649T-TD-E
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 500mW |
| Jing Ti Guan Type | NPN |
| Ji Dian Ji Current（ic） | 1.5A |
| Operating Temperature | 150℃ |
| Ji Dian Ji Jie Zhi Current（icbo） | 1µA |
| DC Gain (hFE@Ic, Vce) | 100@100mA, 5V |
| Ji She Ji Ji Chuan Voltage（vceo） | 160V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 450mV@50mA, 500mA |
| Te Zheng Frequency | 120MHz |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 26
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8272 | |
| 10+ | $ 0.6726 | |
| 30+ | $ 0.5946 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
2SC3650(RANGE:800-3200)
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JSCJ
2SC3736-T2-AZ
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Renesas
2SC3837KT146N
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ROHM
2SC3837KT146P
Transistor: NPN; bipolar; 20V; 50mA; 200mW; SC59,SOT346
ROHM