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2N7002LT1G
Manufacturer
OnsemiManufacturer Product Number
2N7002LT1G
Description
N沟道,60V,0.115A,7.5Ω@10V
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Input Capacitance | 5 pF |
| Power | 0.3W |
| Drain-Source Saturation Current | 0.115A |
| Drain-Source On-Resistance | 7.5Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 285,032
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1671 | |
| 200+ | $ 0.0557 | |
| 1500+ | $ 0.0348 | |
| 3000+ | $ 0.0279 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
2N7002LT1G-ES
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EIECSUPER
2N7002LT1G-MS
类型：N沟道漏源电压(Vdss)：60V连续漏极电流(Id)：300mA功率(Pd)：350mW导通电阻(RDS(on)@Vgs,Id)：2.2Ω@10V,300mA阈值电压(Vgs(th)@Id)：1.6V@250uA栅极电荷(Qg@Vgs)：3.7nC@10V输入电容(Ciss@Vds)：25.5pF@30V反向传输电容(Crss@Vds)
MSKSEMI
2N7002LT1G-VB
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Vbsemi
2N7002LT1H
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Onsemi