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2N7002DW
Manufacturer
OnsemiManufacturer Product Number
2N7002DW
Description
场效应管(MOSFET) 200mW 60V 115mA 2个N沟道 SC-70-6(SOT-363)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Input Capacitance | 5 pF |
| Power | 0.2W |
| Drain-Source Saturation Current | 0.115A |
| Drain-Source On-Resistance | 7.5Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,884
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2075 | |
| 200+ | $ 0.1420 | |
| 1500+ | $ 0.1281 | |
| 3000+ | $ 0.1198 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All2N7002DW H6327
Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R
Infineon
2N7002DW K72
--
JCET/JSCJ
2N7002DW-7-F
场效应管(MOSFET) 310mW 60V 230mA 2个N沟道 SOT-363
Diodes
2N7002DW-7-F
MOSFET 2N-CH 60V 0.23A SOT-363
Diodes