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PHKD6N02LT,518
Manufacturer
NexperiaManufacturer Product Number
PHKD6N02LT,518
Description
NXP 双 Si N沟道 MOSFET PHKD6N02LT,518, 10.9 A, Vds=20 V, 8引脚 SOIC封装
Manufacturer Standard Lead Time
8-12
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Type | Dual N-Channel |
| Threshold Voltage | 1.5V@250µA |
| Input Capacitance | 950pF@10V |
| Continuous Drain Current | 10.9A |
| Power | 4.17W |
| On-Resistance | 20mΩ @ 3A, 5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
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