Manufacturer
NexperiaManufacturer Product Number
PDTA123ETVL
Description
Pre-Biased Bipolar Transistor (BJT)
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Current(ic) | 100mA |
| Ji Dian Ji Jie Zhi Current(icbo) | 1µA |
| Input Resistance | 2.2kΩ |
| Jing Ti Guan Type | PNP-Pre-biased |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 150mV@500µA, 10mA |
| DC Gain (hFE@Ic, Vce) | 30@20mA, 5V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|
Minimum:1/Multiple:1
Total amount: