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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PBHV2160ZX

Manufacturer

Nexperia

Manufacturer Product Number

PBHV2160ZX

Description

SOT223,600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

Manufacturer Standard Lead Time

10-15

Detailed Description

SOT223,600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Jing Ti Guan Type	NPN
Ji Dian Ji Jie Zhi Current（icbo）	100nA
Operating Temperature	150℃
Ji Dian Ji Current（ic）	100mA
Power	650mW
Ji She Ji Ji Chuan Voltage（vceo）	600V
DC Gain (hFE@Ic, Vce)	70@10mA，10V
Collector-Emitter Saturation Voltage (VCE(sat))	125mV@6mA, 30mA

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 36

Quantity	Unit Price	Ext Price
1+	$ 0.8871
10+	$ 0.5514
100+	$ 0.3565

Price For：Each

Minimum:1/Multiple:1

Total amount:

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