Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUK7E2R7-30B,127
Manufacturer
NXPManufacturer Product Number
BUK7E2R7-30B,127
Description
MOSFET HIGH PERF TRENCHMOS
Manufacturer Standard Lead Time
8-12
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source On-Resistance | 0.0027Ω |
| Drain-Source Saturation Current | 75A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 973
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 100+ | $ 2.5233 | |
| 300+ | $ 2.5205 | |
| 500+ | $ 2.5177 | |
| 1000+ | $ 2.5163 | |
| 5000+ | $ 2.5135 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BUK7E3R5-60E,127
I2PAK/N-channel TrenchMOS standard level FET/12NC:934066632127
Nexperia
BUK7E4R0-80E,127
NXP Semiconductors BUK7E4R0-80E/I2PAK/RAILH
NXP
BUK7E4R3-75C,127
MOSFET Trans MOSFET N-CH 75V 192A 3pin(3+Tab)
NXP
BUK7E8R3-40E,127
--
Nexperia
