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2N2222AE3
Manufacturer
MicrosemiManufacturer Product Number
2N2222AE3
Description
Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -65℃~200℃ |
| Power | 500mW |
| Jing Ti Guan Type | NPN |
| Ji Dian Ji Current（ic） | 800mA |
| Ji Dian Ji Jie Zhi Current（icbo） | 50 nA |
| DC Gain (hFE@Ic, Vce) | 100@150 mA, 10 V |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1V@50mA, 500mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
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|---|
Additional Resources
| Attribute | Description |
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In Stock: 0
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Associated Product
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