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MS3134KDFN
Manufacturer
MSKSEMIManufacturer Product Number
MS3134KDFN
Description
此款消费级N沟道MOSFET采用DFN1006-3封装，漏源电压(Vdss): 20V连续，可以承载漏极电流(Id)：750mA，RDSON:200mR，表面贴装封装，尺寸紧凑且具有良好的热性能，适用于高密度PCB布局，应用于电源管理、电机驱动、LED照明、电池管理系统以及其他需要高效能、低阻抗开关功能的电路设计中。
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 750mA |
| On-Resistance | 200mΩ@4.5V,500mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6,420
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 20+ | $ 0.0265 | |
| 200+ | $ 0.0209 | |
| 600+ | $ 0.0167 | |
| 2000+ | $ 0.0153 | |
| 10000+ | $ 0.0139 | |
| 20000+ | $ 0.0125 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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MS3139KDFN
此款消费级P沟道MOSFET采用DFN1006-3封装：漏源电压(Vdss)：20V，可能承载连续漏极电流(Id):600MA，RDSON:500mR，表面贴装封装，尺寸紧凑且具有良好的热性能，适用于高密度PCB布局，应用于电源管理、电机驱动、LED照明、电池管理系统以及其他需要高效能、低阻抗开关功能的电路设计中。
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