Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MS30N06DF
Manufacturer
MSKSEMIManufacturer Product Number
MS30N06DF
Description
此款N沟道场效应晶体管采用紧凑的DFN3x3，具备漏源电压(Vdss)：60V，连续漏极电流(Id)：30A，RDS:10V@10A=28MR,广泛应用于电池管理、负载开关、电机控制、LED驱动、便携式设备、嵌入式系统及众多消费电子产品的电源管理
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,350
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.0891 | |
| 50+ | $ 0.0780 | |
| 150+ | $ 0.0738 | |
| 500+ | $ 0.0668 | |
| 2500+ | $ 0.0641 | |
| 5000+ | $ 0.0627 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
MS30N06NF
此款N沟道场效应晶体管采用紧凑的DFN5X6，具备漏源电压(Vdss)：60V，连续漏极电流(Id)：30A，RDS:10V@10A=24MR,广泛应用于电池管理、负载开关、电机控制、LED驱动、便携式设备、嵌入式系统及众多消费电子产品的电源管理
MSKSEMI
MS30N100HGC0
--
MASPOWER
MS30N90ICC0
--
MASPOWER
MS30N90ICE0
--
MASPOWER
