Manufacturer
MSKSEMIManufacturer Product Number
MS16N65S
Description
此款N沟道MOSFET采用TO-263封装,漏源电压(Vdss):650V,漏极电流(Id):16A,具有低导通电阻和快速开关功能,漏源导通电阻(RDS(on)):0.55Ω @ VGS=10V广泛应用于开关电源、马达驱动、逆变器、电池管理系统以及其他高压大电流开关应用,例如太阳能逆变系统、电源适配器、充电桩等
Manufacturer Standard Lead Time
5-7个
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6308 | |
| 10+ | $ 0.5083 | |
| 30+ | $ 0.4470 | |
| 100+ | $ 0.3857 | |
| 500+ | $ 0.3495 | |
| 1000+ | $ 0.3300 |
Minimum:1/Multiple:1
Total amount: